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參數(shù)資料
| 型號： | 2SJ182(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 3A條（?。﹟對251VAR |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SJ182(L) |
2SJ181(L), 2SJ181(S)
5
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
2
1
0.2
0.5
0.1
0.02
0.05
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
V
= –20 V
Pulse Test
DS
Tc = –25 °C
75 °C
25 °C
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
1000
200
500
100
20
50
10
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
di / dt = 100 A / s
V
= 0, Ta = 25 °C
GS
0
–10
–20
–30
-40
–50
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
1000
300
100
30
10
3
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ182(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SJ182L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ188FA | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ189FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ286 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 150MA I(D) | TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ182L-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 3-Pin(3+Tab) DPAK(L) |
| 2SJ182S | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 3A 3PIN DPAK(S)-(1) - Rail/Tube |
| 2SJ183 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ184 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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