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參數(shù)資料
| 型號： | 2SJ182(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 3A條（丁）|對251VAR |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SJ182(L) |
2SJ181(L), 2SJ181(S)
7
–1.0
–0.8
–0.6
–0.4
–0.2
0
Source to Drain Voltage
V
(V)
SD
Pulse Test
0, 5 V
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
–0.2
–0.4
–0.6
–0.8
–1.0
V
= –10 V
GS
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
100 m
1
10
s
(t)
γ
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ182(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SJ182L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ188FA | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ189FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ286 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 150MA I(D) | TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ182L-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 3-Pin(3+Tab) DPAK(L) |
| 2SJ182S | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 3A 3PIN DPAK(S)-(1) - Rail/Tube |
| 2SJ183 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ184 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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