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參數(shù)資料
| 型號： | 2SJ182L |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管貼片MOSFET以251余巴基斯坦 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SJ182L |
2SJ181(L), 2SJ181(S)
3
40
30
20
10
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
–10
–20
–50
–100 –200
–500 –1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
10 s
DC
Operation
(Tc
=
25
°C)
1 ms
100
s
PW
=
10
ms
(1shot)
–1.0
–0.8
–0.6
–0.4
–0.2
0
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
–10
–20
–30
–40
–50
–10 V
–5 V
Pulse Test
V
= –4 V
GS
–4.5 V
–6 V
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
–2
–4
–6
–8
–10
Tc = –25 °C
75 °C
25 °C
V
= –20 V
Pulse Test
DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ188FA | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ189FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ286 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 150MA I(D) | TO-236 |
| 2SJ388(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ388L | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ182L-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 3-Pin(3+Tab) DPAK(L) |
| 2SJ182S | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 3A 3PIN DPAK(S)-(1) - Rail/Tube |
| 2SJ183 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ184 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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