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參數(shù)資料
| 型號： | 2SJ182L |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管貼片MOSFET以251余巴基斯坦 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SJ182L |
2SJ181(L), 2SJ181(S)
4
–20
–16
–12
–8
–4
0
–4
–8
12
–16
–20
Gate to Source Voltage
V
(V)
GS
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
–0.1 A
–0.2 A
D
I
= –0.5 A
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
500
200
100
20
50
10
5
–0.02
–0.05 –0.1
–0.2
–0.5
–1
–2
–15 V
V
= –10 V
GS
Pulse Test
40
32
24
16
8
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
GS
Pulse Test
V
= –10 V
–0.1 A
–0.2 A
D
I
= –0.5 A
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PDF描述 |
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| 2SJ286 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 150MA I(D) | TO-236 |
| 2SJ388(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ388L | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ182L-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 3-Pin(3+Tab) DPAK(L) |
| 2SJ182S | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 3A 3PIN DPAK(S)-(1) - Rail/Tube |
| 2SJ183 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ184 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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