參數(shù)資料
型號(hào)： 2SJ186
廠商： Hitachi,Ltd.
英文描述： Silicon P-Channel MOS FET
中文描述： 硅P溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 42K
代理商： 2SJ186
2SJ186
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
15
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
12 V, V
DS
= 0
V
DS
= –160 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –0.25 A, V
GS
= –10 V*
1
I
D
= –1 A, V
GS
= –10 V*
1
I
D
= –0.25 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–50
V
GS(off)
R
DS(on)
–2.0
—
–4.0
V
Static drain to source on state
—
8.0
12.0
resistance
—
10.0
15.0
Forward transfer admittance
|y
fs
|
Ciss
0.18
0.3
—
S
Input capacitance
—
75
—
pF
Output capacitance
Coss
—
32
—
pF
Reverse transfer capacitance
Crss
—
5
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
6
—
ns
I
D
= –0.25 A, V
GS
= –10 V,
R
L
= 120
Rise time
—
6
—
ns
Turn-off delay time
—
17
—
ns
Fall time
—
15
—
ns
Body to drain diode forward
voltage
—
0.95
—
V
I
F
= –0.5 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
100
—
ns
I
F
= –0.5 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
Marking for 2SJ186 is “CY”.
相關(guān)PDF資料
PDF描述
2SJ187 Very High-Speed Switching Applications
2SJ188 Very High-Speed Switching Applications
2SJ189 Very High-Speed Switching Applications
2SJ193 Very High-Speed Switching Applications
2SJ194 Very High-Speed Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ186CY(TL-E) 制造商:Renesas Electronics Corporation 功能描述:
2SJ186CYEL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ186CYTL 制造商:Renesas Electronics Corporation 功能描述:
2SJ187 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications
2SJ187TD 制造商:DC 功能描述:*
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