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參數(shù)資料
| 型號： | 2SJ186 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SJ186 |
2SJ186
4
1.2
0.8
0.4
0
50
100
150
Case Temperature T
C
(°C)
C
Power vs. Temperature Derating
–10
–10
–100
–1,000
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
–1
–1
–0.1
–0.01
–0.001
Ta = 25°C
10
μ
s
100
μ
s
DCOpeaion(T
C
=25°C
Oeao nti Ae
i ime yR
DS(n
–1.0
–20
–50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–0.8
–0.2
–10
–30
–40
0
–0.4
–0.6
D
D
Pulse Test
V
GS
= –4 V
–5 V
–6 V
–8 V
–10 V
–1.0
–4
–10
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
–0.8
–0.2
–2
–6
–8
0
–0.4
–0.6
V
DS
= –20 V
Pulse Test
T
C
= 75°C
25°C
–25°C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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| 2SJ187TD | 制造商:DC 功能描述:* |
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