參數(shù)資料
型號: 2SJ387(L)
文件頁數(shù): 10/12頁
文件大?。?/td> 56K
代理商: 2SJ387(L)
2SJ387(L), 2SJ387(S)
7
–20
–16
–12
–8
–4
0
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
–3 V
V
= 0, 5 V
GS
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
100 m
1
10
s
(t)
γ
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
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參數(shù)描述
2SJ387L(E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ387L-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ387S 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
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2SJ388(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-251AA