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參數(shù)資料
| 型號(hào)： | 2SJ387(L) |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SJ387(L) |
2SJ387(L), 2SJ387(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±10
—
V
I
G = ±200 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±6.5 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–100
A
V
DS = –16 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–0.5
—
–1.5
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—
0.05
0.07
I
D = –5 A
V
GS = –4 V*
1
—
0.07
0.1
I
D = –5 A
V
GS = –2.5 V*
1
Forward transfer admittance
|y
fs|
7
12
—
S
I
D = –5 A
V
DS = –10 V*
1
Input capacitance
Ciss
—
1170
—
pF
V
DS = –10 V
Output capacitance
Coss
—
860
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
20
—
ns
I
D = –5 A
Rise time
t
r
—
325
—
ns
V
GS = –4 V
Turn-off delay time
t
d(off)
—
350
—
ns
R
L = 2
Fall time
t
f
—
425
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.0
—
V
I
F = –10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
240
—
ns
I
F = –10 A, VGS = 0,
diF/dt = 20 A/s
Note:
1. Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ387L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ388(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-251AA |
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