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參數(shù)資料
| 型號(hào)： | 2SJ56 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 8A條（?。﹟至3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ56 |
2SJ550(L),2SJ550(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.075
0.095
I
D = –8A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.105
0.155
I
D = –8A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
6.5
11
—
S
I
D = –8A, VDS = –10V
Note4
Input capacitance
Ciss
—
850
—
pF
V
DS = –10V
Output capacitance
Coss
—
420
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
110
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
12
—
ns
V
GS = –10V, ID = –8A
Rise time
t
r
—
75
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
125
—
ns
Fall time
t
f
—75
—
ns
Body–drain diode forward voltage
V
DF
—
–1.1
—
V
I
F = –15A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –15A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
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