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參數(shù)資料
| 型號(hào)： | 2SJ56 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 8A條（?。﹟至3 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ56 |
2SJ550(L),2SJ550(S)
5
–4.0
–3.2
–2.4
–1.6
–0.8
0
–4
–8
–12
–16
–20
I
= –15 A
D
–10 A
–5 A
Pulse Test
–0.1
–1
–10
–100
–0.3
–3
–30
10
1
0.01
0.40
0.32
0.24
0.16
0.08
–40
0
40
80
120
160
0
Pulse Test
0.1
0.03
0.3
3
V
= –4 V
GS
–10 V
Pulse Test
–5, –10, –15 A
V
= –4 V
GS
–10 V
I
= –15 A
D
–10 A –5 A
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
25 °C
Tc = –25 °C
75 °C
V
= –10 V
DS
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
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