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參數(shù)資料
| 型號： | 2SJ599-Z |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 2SJ599-Z |
Data Sheet D14644EJ3V0DS
6
2SJ599
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
L - Inductive Load - H
E
AS
-
Single
Avalanche
Energy
-
mJ
1
10
100
1 m10 m
VDD = –30 V
RG = 25
VGS = –20
→ 0 V
IAS = –20 A
10
100
0.1
E
AS = 40
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
VDD = –30 V
RG = 25
VGS = –20
→ 0 V
IAS
≤ –20 A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ601-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ599-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -20A 75m@10V TO252 Bulk |
| 2SJ599-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
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