- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄30602 > 2SJ601-AZ 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ601-AZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | 2SJ601-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14646EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2000, 2001
The mark
shows major revised points.
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 31 m
MAX. (VGS = –10 V, ID = –18 A)
RDS(on)2 = 46 m
MAX. (VGS = –4.0 V, ID = –18 A)
Low input capacitance:
Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m36
A
Drain Current (pulse)
Note1
ID(pulse)
m120
A
Total Power Dissipation (TC = 25°C)
PT
65
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
–35
A
Single Avalanche Energy
Note2
EAS
123
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25
, VGS = –20 → 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ601
TO-251 (MP-3)
2SJ601-Z
TO-252 (MP-3Z)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ601-Z-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ602-Z | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-Z-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ602-ZJ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ601-Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ601-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 Bulk |
| 2SJ601-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。