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參數(shù)資料
| 型號(hào)： | 2SJ601-AZ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | 2SJ601-AZ |
Data Sheet D14646EJ4V0DS
6
2SJ601
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
VDD = –30 V
RG = 25
VGS = –20
→ 0 V
IAS
≤ –35 A
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
1
10
100
1 m10 m
VDD = –30 V
RG = 25
VGS = –20
→ 0 V
IAS = –35 A
10
100
0.1
E
AS = 123
mJ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ601-Z-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ602-Z | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-Z-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ602-ZJ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ601-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ601-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 Bulk |
| 2SJ601-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
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