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參數(shù)資料
| 型號(hào)： | 2SJ620 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:35V |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型（二級(jí)-ヰ- MOSV） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | 2SJ620 |
2SJ620
2002-09-11
3
F
f
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Gate-source voltage V
GS
(V)
I
D
– V
GS
D
D
Gate-source voltage V
GS
(V)
V
DS
– V
GS
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
R
D
0
50
10
30
20
40
VGS 2.5 V
Common source
Tc 25°C
pulse test
0
4
8
12
16
20
8
3
10
6
3.5
4
5
4.5
0
20
4
12
8
16
Common source
Tc 25°C
pulse test
VGS 2 V
3
10
6
2.5
8
4
0
0.4
0.8
1.2
1.6
2.0
3.5
4.5
0
2
3
4
5
1
0
20
4
12
8
16
Common source
VDS 10 V
pulse test
Tc 55°C
25
100
0
0.5
2.0
1.0
3.0
0
8
12
16
4
2.5
1.5
2
6
10
14
Common source
Tc 25°C
pulse test
ID 18 A
4.5
9
1
10
3
30
0.03
0.3
0.01
0.1
100
VGS 4 V
Common source
Tc 25°C
Pulse test
10
25
2
1
100
100
30
10
3
5
5
10
30
50
3
Tc 55°C
100
50
Common source
VDS 10 V
pulse test
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|---|---|
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