參數(shù)資料
型號(hào): 2SJ620
廠商: Toshiba Corporation
英文描述: Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:35V
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型(二級(jí)-ヰ- MOSV)
文件頁(yè)數(shù): 5/6頁(yè)
文件大小: 225K
代理商: 2SJ620
2SJ620
2002-09-11
5
r
th
t
w
Safe operating area
E
AS
– T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) Tch (°C)
N
r
t
/
t
A
A
D
D
0
25
200
400
600
1000
800
50
75
100
125
150
10
100
1m
10m
100m
1
10
0.01
0.03
0.1
1
10
Single pulse
0.01
0.02
0.05
0.1
0.2
Duty 0.5
T
PDM
t
Duty t/T
Rth (ch-c) 1.0°C/W
0.3
3
0.1
0.1
1
10
100
1000
10
100
1000
*
:
Single nonrepetitive pulse
Tc 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed)
*
100 s
*
DC operation
Tc 25°C
1 ms
*
VDSS max
1
15
V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
25
V
DD
50 V, L 3.56 mH
VDD
BVDSS
BVDSS
2
I
L
2
1
Ε
AS
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