參數(shù)資料
型號: 2SJ659-TL
元件分類: JFETs
英文描述: 14 A, 60 V, 0.206 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SMP-FD, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 53K
代理商: 2SJ659-TL
2
Power Transistors
2SD1539, 2SD1539A
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
ton, tstg, tf — IC
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
6
5
4
3
2
1
T
C=25C
I
B=60mA
50mA
40mA
30mA
20mA
10mA
5mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
V
CE=2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=5V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
08
26
47
15
3
0.01
10
1
0.1
0.03
0.3
3
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=10 (IB1=–IB2)
V
CC=20V
T
C=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
I
CP
I
C
10ms
DC
t=1ms
2SD1539
2SD1539A
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
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