參數(shù)資料
型號: 2SJ77
元件分類: JFETs
英文描述: 0.5 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 4/6頁
文件大小: 32K
代理商: 2SJ77
2SJ76, 2SJ77, 2SJ78, 2SJ79
4
–100
–0.8
–2.0
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(mA)
Typical Transfer Characteristics
–80
–20
–0.4
–1.2
–1.6
0
–40
–60
T
C
=
–25°C25
75
VDS = –20 V
200
–10
–200
Drain Current ID (mA)
Forward
Transfer
Admittance
yfs
(mS)
100
10
–5
–20
–100
2
20
50
Forward Transfer Admittance
vs. Drain Current
TC = 25°C
VDS = –20 V
–2
5
–50
500
100 k
50 M
Frequency f (Hz)
Forward
Transfer
Admittance
yfs
(mS)
100
1.0
10 k
1 M
10 M
0.05
10
Forward Transfer Admittance
vs. Frequency
TC = 25°C
VDS = –20 V
ID = –10 mA
5 k
0.1
相關PDF資料
PDF描述
2SJ77 0.5 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ76 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1014-01 12 A, 500 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
2SK1017 20 A, 450 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1052 0.5 A, 450 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關代理商/技術參數(shù)
參數(shù)描述
2SJ77-E 功能描述:MOSFET P-CH 160V 0.5A TO-220 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SJ77K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 160V V(BR)DSS | 500MA I(D) | TO-220
2SJ78 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ78(E) 制造商:Renesas Electronics Corporation 功能描述:
2SJ78-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET