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參數(shù)資料
| 型號(hào)： | 2SK1294 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 2SK1294 |
2SK1254(L), 2SK1254(S)
5
2.0
1.6
1.2
0.8
0.4
0
24
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
3 A
2 A
ID = 1 A
PulseTest
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
5
2
1.0
0.5
0.05
0.5
1.0
2.0
5.0
20
Drain Current ID (A)
0.2
Static Drain to Source on State
Resistance vs. Drain Current
10
0.2
0.1
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10 V
VGS = 4 V
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
1, 2 A
ID = 3 A
3 A
1, 2 A
VGS = 4 V
VGS = 10 V
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
10
5
2
1.0
0.1
0.2
5
0.2
0.5
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
1.0
2
0.05
0.1
–25°C
TC = 25°C
75°C
VDS = 10 V
Pulse Test
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PDF描述 |
|---|---|
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| 2SK1308A | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1311 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SOT-89 |
| 2SK1313(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1295 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK1295-AZ | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SK1296 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1297 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1298 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 40A 3-Pin(3+Tab) TO-3PFM Bulk |
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