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參數(shù)資料
| 型號： | 2SK1294 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SK1294 |
2SK1254(L), 2SK1254(S)
7
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2
1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
Pulse Test
10 V
15 V
VGS = 0, –5 V
3
1.0
0.1
0.03
0.01
0.3
10
100
1 m
10 m
100 m
1
10
Pulse Width PW (s)
0.05
0.02
0.2
0.1
0.5
D = 1
θch–c (t) = γ
S (t) θch–c
θch–c = 6.25°C/W, T
C = 25°C
PDM
PW
T
D =
T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γ S
(t)
1 Shot
Pulse
TC = 25°C
0.01
Vin Monitor
Vout Monitor
RL
50
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin
10 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Wavewforms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1297 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR |
| 2SK1308 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1308A | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1311 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SOT-89 |
| 2SK1313(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1295 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK1295-AZ | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SK1296 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1297 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1298 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 40A 3-Pin(3+Tab) TO-3PFM Bulk |
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