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參數(shù)資料
| 型號： | 2SK1299(L) |
| 元件分類： | JFETs |
| 英文描述： | 0.45 ohm, POWER, FET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 57K |
| 代理商： | 2SK1299(L) |
2SK1299(L), 2SK1299(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
A
V
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
—
0.25
0.35
I
D = 2 A, VGS = 10 V *
1
—
0.30
0.45
I
D = 2 A, VGS = 4 V
1*
Forward transfer admittance
|yfs|
2.4
4.0
—
S
I
D = 2 A, VDS = 10 V *
1
Input capacitance
Ciss
—
400
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
165
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
45
—
pF
Turn-on delay time
t
d(on)
—5
—ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
—
35
—
ns
R
L = 15
Turn-off delay time
t
d(off)
—
160
—
ns
Fall time
t
f
—60
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
135
—
ns
I
F = 3 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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PDF描述 |
|---|---|
| 2SK1299(S) | 0.45 ohm, POWER, FET |
| 2SK1302-E | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1303-E | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1303 | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1304 | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1299S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1300 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1300-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB |
| 2SK1301 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1301(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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