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參數(shù)資料
| 型號： | 2SK1306-E |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2SK1306-E |
2SK1306
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
20
16
12
8
4
20
16
12
8
4
0
VGS = 2.5 V
Pulse Test
7 V
3 V
3.5 V
10 V
2.5 V
7 V
4 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
05
4
8
12
16
20
0
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25
°C
TC = 25°C
75
°C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
1.0
1.5
2.0
2.5
0
0.5
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 5 A
10 A
20 A
10
Drain Current ID (A)
20
5
2
100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005
50
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
30
1.0
1
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
shot)
Operation in this Area
is Limited by R
DS (on)
10
3
0.3
0.1
3
30
300
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1307 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1307-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1308A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1310 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER) |
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