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參數(shù)資料
| 型號： | 2SK1336TL |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管MOSFET以92 E系至237 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK1336TL |
2SK1313(L)(S), 2SK1314(L)(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1313
V
DSS
450
V
2SK1314
500
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
5A
Drain peak current
I
D(pulse)*
1
20
A
Body to drain diode reverse drain current
I
DR
5A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at T
C =
25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1345 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-186 |
| 2SK1346 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1362 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | TO-247VAR |
| 2SK1371 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1372 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 20A I(D) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1336TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1337 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1337(TZ-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1337TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1338 | 制造商:Renesas Electronics Corporation 功能描述:2SK1338 - Rail/Tube |
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