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參數(shù)資料
| 型號： | 2SK1525 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 20A條（丁）|對220VAR |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1525 |
2SK1515, 2SK1516
5
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
ID = 2 A
10 A
5 A
5
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.2
0.1
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.05
10
VGS = 10 V
0.5
2
5
20
50
1
15 V
2.0
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
1.6
0.4
0
80
120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
–40
VGS = 10 V
Pulse Test
ID = 10 A
2, 5 A
50
0.2
10
Drain Current ID (A)
10
1
0.5
5
2
0.1
1
Forward
Transfer
Admittance
yfs
(S)
Forward Transfer Admittance
vs. Drain Current
20
VDS = 20 V
25°C
TC = –25°C
75°C
0.5
Pulse Test
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1529O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1529Y | TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR |
| 2SK1530O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1530Y | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR |
| 2SK1532 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1526 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1526-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1527 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 40A 3-Pin(3+Tab) TO-3PL |
| 2SK1527-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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