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參數(shù)資料
| 型號： | 2SK1525 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 20A條（?。﹟對220VAR |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1525 |
2SK1515, 2SK1516
6
5,000
0.5
10
Reverse Drain Current IDR (A)
2,000
100
15
0.2
500
1,000
50
2
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
200
20
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
500
16
40
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
200
300
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 7 A
Gate Charge Qg (nc)
250 V
400 V
VDD = 100 V
500
Drain Current ID (A)
Switching
Time
t
(ns)
200
5
50
100
10
Switching Characteristics
td (off)
0.5
0.2
1
tf
tr
td (on)
20
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
210
520
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1529O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1529Y | TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR |
| 2SK1530O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1530Y | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR |
| 2SK1532 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1526 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1526-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1527 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 40A 3-Pin(3+Tab) TO-3PL |
| 2SK1527-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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