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參數(shù)資料
| 型號： | 2SK1530-Y |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-21F1B, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 236K |
| 代理商： | 2SK1530-Y |
Data Sheet D11706EJ2V0DS00
3
2SK2858
TYPICAL CHARACTERISTICS (TA = 25 °C)
30
150
60
90
20
0
60
80
40
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Der
ating
F
actor
-
%
TA - Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
mA
2
810
4
6
200
100
0
400
300
2.5 V
3 V
3.5 V
VGS = 4 V
1.0
2.0
3.0
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
4.0
5.0
VGS - Gate to Sorce Voltage - V
TA = 125C
75C
25C
VDS = 3 V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
1
10
100
1000
0.01
0.1
0.001
0.0001
VDS = 3 V
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
mS
TA =
25C
75C
125C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.0001
0.001
0.1
0.01
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
10
15
10
20
5
VGS = 2.5 V
TA = 125C
25C
75C
25C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.001
0.0001
0.1
1
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
0
5
10
15
VGS = 4 V
TA = 125C
75C
25C
5
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| 2SK1532 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK1536 | 3 A, 900 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1530-Y(F) | 功能描述:MOSFET MOSFET N-CH 200V 12A TO-3PL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK1530-YF | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1531 | 制造商:Toshiba 功能描述:Cut Tape 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1532 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK1533 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:HVX Series Power MOSFET |
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