- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371539 > 2SK1611 (PANASONIC CORP) Silicon N-Channel Power F-MOS FET PDF資料下載
參數(shù)資料
| 型號： | 2SK1611 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 3 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SK1611 |
1
Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
I
Features
G
High avalanche energy capacity
G
V
GSS
: 30V guaranteed
G
Low R
DS(on)
, high-speed switching characteristic
I
Applications
G
High-speed switching (switching power supply, AC adaptor)
G
For high-frequency power amplification
I
Absolute Maximum Ratings
(T
C
= 25°C)
unit: mm
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
±30
±3
±6
20
50
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
EAS
*
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
L = 4.5mH, I
D
= 3A, V
DD
= 50V
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100
min
800
20
1
1.5
typ
3.2
2.4
730
90
40
40
35
105
max
0.1
±1
5
4
Unit
mA
μ
A
V
mJ
V
S
pF
pF
pF
ns
ns
ns
*
Single pulse
*
Avalanche energy capacity test circuit
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
10.0±0.2
5.5±0.2
7
1
0
1
S
4
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
2
1
3
2.7±0.2
4.2±0.2
4
φ
3.1±0.1
V
DS
D
rain
I
D
L
Gate
S
ource
R
GS
C
V
DD
PVS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK161 | N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) |
| 2SK1645 | For C to X-band Local Oscillator and Amplifier |
| 2SK1663 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK1663L | N-CHANNEL SILICON POWER MOS-FET |
| 2SK1663S | N-CHANNEL SILICON POWER MOS-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK161-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK161-O(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK161-Y(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin 2-4E1D 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin 2-4E1D Bulk |
| 2SK1626-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 5A 3-Pin(3+Tab) TO-220FM Box |
| 2SK1629(E) | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。