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參數(shù)資料
| 型號： | 2SK1611 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 3 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SK1611 |
2
Power F-MOS FETs
I
D
V
DS
| Y
fs
|
I
D
R
DS(on)
I
D
I
D
V
GS
C
iss
, C
oss
, C
rss
V
DS
t
on
, t
f
, t
d(off)
I
D
P
D
Ta
Area of safe operation (ASO)
EAS
T
j
2SK1611
0
Drain to source voltage V
DS
(V)
10
20
30
40
50
60
0
1
2
3
4
5
6
4V
5V
50W
7V
10V
V
GS
=15V
6V
T
C
=25C
D
D
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V
DS
=25V
T
C
=25C
Drain current I
D
(A)
F
f
|
0
1
2
3
4
5
6
0
10
8
6
4
2
V
GS
=10V
15V
T
C
=25C
Drain current I
D
(A)
D
D
)
0
Gate to source voltage V
GS
(V)
10
8
2
6
4
0
1
2
3
4
5
6
V
DS
=25V
T
C
=25V
D
D
0
Drain to source voltage V
DS
(V)
40
80
120
160
200
240
10
30
100
300
1000
3000
10000
T
C
=25C
C
iss
C
oss
C
rss
I
R
i
,
o
,
r
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
t
d(off)
t
f
t
on
V
DD
=200V
V
GS
=10V
T
C
=25C
Drain current I
D
(A)
S
o
,
f
,
d
0
20
40
60
80 100 120 140 160
0
10
20
30
40
50
60
(1) T
=Ta
(2) Without heat sink
(P
D
=2W)
(1)
(2)
Ambient temperature Ta (C)
A
D
1
Drain to source voltage V
DS
(V)
10
100
1000
3
30
300
0.01
0.1
1
10
100
0.03
0.3
3
30
Non repetitive pulse
T
C
=25C
I
DP
DC
10ms
I
D
t=1ms
D
D
25
50
75
100
125
150
175
0
30
25
20
15
10
5
I
D
=3A
V
DD
=50V
Junction temperature T
j
(C)
A
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|---|---|
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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| 2SK161-Y(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin 2-4E1D 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin 2-4E1D Bulk |
| 2SK1626-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 5A 3-Pin(3+Tab) TO-220FM Box |
| 2SK1629(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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