參數(shù)資料
型號： 2SK1666
元件分類： JFETs
英文描述： 0.035 ohm, POWER, FET
封裝： TO-3PFM, 3 PIN
文件頁數(shù)： 3/9頁
文件大?。?/td> 45K
代理商： 2SK1666
2SK1666
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.016
0.02
I
D = 20 A, VGS = 10 V *
1
—
0.022
0.035
I
D = 20 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
20
32
—
S
I
D = 20 A, VDS = 10 V *
1
Input capacitance
Ciss
—
3950
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
1920
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
360
—
pF
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 20 A, VGS = 10 V,
Rise time
t
r
—
180
—
ns
R
L = 1.5
Turn-off delay time
t
d(off)
—
630
—
ns
Fall time
t
f
—
290
—
ns
Body to drain diode forward
voltage
V
DF
—
1.3
—
V
I
F = 45 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
140
—
ns
I
F = 45 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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