參數(shù)資料
型號: 2SK1806D
英文描述: TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 1.2MA I(DSS) | FP
中文描述: 晶體管|場效應(yīng)| N溝道| 30V的五(巴西)直| 1.2MA我(直)|計劃生育
文件頁數(shù): 4/6頁
文件大?。?/td> 32K
代理商: 2SK1806D
2SK1831, 2SK1832
4
75
50
25
50
100
150
Case Temperature Tc (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
0
Drain
Current
I
(A)
Drain to Source Voltage V
(V)
DS
D
1 ms
PW
=
10
ms
(1
shot)
100
s
10
s
Operation in this
area is limited
by R
(on)
DS
Maximum Safe Operation Area
50
30
10
0.3
0.05
1
300
1000
Ta = 25°C
DC
Operation
(Tc
=
25°C)
3
1
0.1
100
30
10
3
K1831
K1832
PW
T
P
DM
θch – c(t) = s(t) ch – c
ch – c = 2.50°C/W, Tc = 25°C
θ
γθ
.
PW
D =
T
Normalized
Transient
Thermal
Impedance
s
(t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
0.01
0.03
0.1
0.3
1
3
10
100
1 m
10 m
100 m
1
10
1 Shot
Pulse
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Pulse Width PW (S)
相關(guān)PDF資料
PDF描述
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