參數(shù)資料
型號(hào): 2SK1806E
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場(chǎng)效應(yīng)| N溝道| 30V的五(巴西)直| 2.5mA的我(直)|計(jì)劃生育
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 32K
代理商: 2SK1806E
2SK1831, 2SK1832
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
K1831
V
DSS
450
V
K1832
500
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)*
1
30
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
相關(guān)PDF資料
PDF描述
2SK1810 TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 10A I(D) | TO-220
2SK1812 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1816L TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D)
2SK1816S Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1817MR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-220
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