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參數(shù)資料
| 型號： | 2SK1838L-E |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 250 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 89K |
| 代理商： | 2SK1838L-E |
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
1
A
Drain peak current
ID(pulse)
*1
2
A
Body to drain diode reverse drain current
IDR
1
A
Channel dissipation
Pch
*2
10
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
250
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
50
A
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
0.3
0.5
—
S
VDS = 10 V, ID = 0.5 A *
3
Static drain to source on state
resistance
RDS(on)
—
5.5
8.0
ID = 0.5 A, VGS = 10 V *
3
Input capacitance
Ciss
—
60
—
pF
Output capacitance
Coss
—
30
—
pF
Reverse transfer capacitance
Crss
—
5
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
5
—
ns
Rise time
tr
—
6
—
ns
Turn-off delay time
td(off)
—
10
—
ns
Fall time
tf
—
4.5
—
ns
VGS = 10 V, ID = 0.5 A,
RL = 60
Body to drain diode forward voltage
VDF
—
0.96
—
V
IF = 1 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
160
—
ns
IF = 1 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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