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參數(shù)資料
| 型號： | 2SK1863-E |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 176K |
| 代理商： | 2SK1863-E |
2SK1862, 2SK1863
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1862
450
Drain to source voltage
2SK1863
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
3
A
Drain peak current
ID(pulse)
*1
12
A
Body to drain diode reverse drain current
IDR
3
A
Channel dissipation
Pch
*2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1862
450
Drain to source
breakdown voltage
2SK1863
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1862
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1863
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1862
—
2.0
2.8
Static drain to source on
state resistance
2SK1863
RDS(on)
—
2.2
3.0
ID = 2 A, VGS = 10 V*
3
Forward transfer admittance
|yfs|
1.5
2.5
—
S
ID = 2 A, VDS = 10 V*
3
Input capacitance
Ciss
—
330
—
pF
Output capacitance
Coss
—
90
—
pF
Reverse transfer capacitance
Crss
—
15
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
7
—
ns
Rise time
tr
—
20
—
ns
Turn-off delay time
td(off)
—
30
—
ns
Fall time
tf
—
20
—
ns
ID = 2 A, VGS = 10 V,
RL = 15
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 3 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
300
—
ns
IF = 3 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse Test
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