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參數(shù)資料
| 型號： | 2SK1863-E |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 176K |
| 代理商： | 2SK1863-E |
2SK1862, 2SK1863
Rev.2.00 Sep 07, 2005 page 4 of 6
5
4
3
2
1
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
3 A
ID = 1 A
2 A
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
0.05
0.1
0.2
1.0
2
5
Drain Current ID (A)
0.1
0.2
0.5
VDS = 10 V
Pulse Test
75
°C
–25
°C
Forward
Transfer
Admittance
y
fs
(S)
TC = 25°C
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
1,000
500
100
50
20
10
200
0.05
0.1
0.2
0.5
1.0
2
5
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance
vs. Drain to Source Voltage
1,000
100
10
1
010
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Coss
Ciss
Crss
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
500
400
300
200
100
0
4
8
12
16
20
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
400 V
VDS
ID = 3 A
VGS
250 V
VDD = 400 V
250 V
100 V
VDD = 100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
0.05
0.1
0.2
0.5
1.0
2
5
Drain Current ID (A)
tf
td (on)
tr
td (off)
VGS = 10 V, VDD = 30 V
PW = 2
s, duty ≤ 1 %
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