參數(shù)資料
型號(hào): 2SK2202
元件分類: JFETs
英文描述: 7 A, 120 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220FM, 3 PIN
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 54K
代理商: 2SK2202
Data Sheet D14650EJ2V0DS
5
2SJ605
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
ID= –33A
50
40
30
20
10
0
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1.0
ISD
-
Diode
Forward
Current
-
A
0
–1.5
VSD - Source to Drain Voltage - V
–0.5
Pulsed
–0.1
–1
–10
–100
–1000
0 V
VGS = –10 V
–2.0
–4 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
1000
10000
100000
–0.1
–1
–10
VGS = 0 V
f = 1 MHz
–100
Crss
Coss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
–1
–0.1
100
1000
–10
–100
tf
tr
td(on)
td(off)
VDD = –30 V
RG = 0
VGS = –10 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
040
60
20
80
100
–60
–50
–40
–30
–20
–10
0
–12
–10
–8
–6
–4
–2
0
ID = –65 A
VDS
VGS
VDD = –48 V
–30 V
–12 V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
–10
–100
–1000
1 m10 m
VDD = –30 V
RG = 25
VGS = –20
→ 0 V
IAS = –45 A
10
100
–1
E
AS = 203
mJ
相關(guān)PDF資料
PDF描述
2SK2203 0.013 ohm, POWER, FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2202-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK2203 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK2204(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-262AA
2SK2204(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-263AB
2SK2204L 制造商:未知廠家 制造商全稱:未知廠家 功能描述: