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參數資料
| 型號： | 2SK2311(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 2/6頁 |
| 文件大小： | 427K |
| 代理商： | 2SK2311(2-10S2B) |
2SK2311
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 12 A
—
57
80
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 12 A
—
36
46
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 12 A
10
16
—
S
Input capacitance
Ciss
—
1000
—
Reverse transfer capacitance
Crss
—
200
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
550
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
30
—
Fall time
tf
—
55
—
Switching time
Turnoff time
toff
—
130
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
38
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 25 A
—
13
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
25
A
Pulse drain reverse current
(Note 1)
IDRP
—
100
A
Forward voltage (diode)
VDSF
IDR = 25 A, VGS = 0 V
—
1.8
V
Reverse recovery time
trr
—
50
—
ns
Reverse recovery charge
Qrr
IDR = 25 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
35
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2311
Part No. (or abbreviation code)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2311-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2312 | 功能描述:MOSFET N-Ch 60V 45A Rdson 0.017 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2312(F) | 功能描述:MOSFET N-Ch 60V 45A Rdson 0.017 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2312_02 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV) |
| 2SK2312_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV) |
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