
2SK2322(L), 2SK2322(S)
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source
Suitable for Switching regulator, DC-DC converter
Avalanche ratings
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S