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參數(shù)資料
| 型號(hào)： | 2SK2330S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SK2330S |
2SK2330(L), 2SK2330(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A
V
GS
= 10 V*
I
D
= 8 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
2.0
—
3.0
Static drain to source on state
resistance
—
0.3
0.4
1
Forward transfer admittance
|y
fs
|
8
13
—
S
1
Input capacitance
Ciss
—
2050
—
pF
Output capacitance
Coss
—
600
—
pF
Reverse transfer capacitance
Crss
—
75
—
pF
Turn-on delay time
t
d(on)
—
30
—
ns
I
D
= 8 A
V
GS
= 10 V
R
L
= 3.75
Rise time
t
r
t
d(off)
t
f
V
DF
—
110
—
ns
Turn-off delay time
—
150
—
ns
Fall time
—
70
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
500
—
μ
s
I
= 15 A, V
= 0,
diF / dt = 100 A /
μ
s
See characteristic curves of 2SK1168.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2331 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2332 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2333 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:HVX-2 Series Power MOSFET(700V 6A) |
| 2SK2333-7100 | 制造商:Shindengen 功能描述: |
| 2SK2334(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251 |
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