參數(shù)資料
型號: 2SK2461
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大?。?/td> 114K
代理商: 2SK2461
MOS FIELD EFFECT TRANSISTOR
2SK2461
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 80 m
MAX. (@ V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 0.1
MAX. (@ V
GS
= 4 V, I
D
= 10 A)
Low C
iss
C
iss
= 1400 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
*
PW
10
μ
s, Duty Cycle
1 %
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
100
±
20
±
20
±
80
35
2.0
150
V
V
A
A
W
W
C
C
A
mJ
T
ch
T
stg
I
AS
E
AS
–55 to +150
20
40
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
1995
DATA SHEET
Document No. TC-2529
(O. D. No. TC-8078)
Date Published April 1995 P
Printed in Japan
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
MP-45F (ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
2.5 ±0.1
0.65 ±0.1
1.5 ±0.2
2.54
1.3 ±0.2
2.54
0.7 ±0.1
4
1
1
3
1
2 3
1. Gate
2. Drain
3. Source
1
M
PACKAGE DIMENSIONS
(in millimeters)
相關PDF資料
PDF描述
2SK2462 Switching N-channel power MOS FET industrial use
2SK2463 Small switching(小開關(N溝道MOSFET))
2SK2464 Ultrahigh-Speed Switching Applications
2SK2476 Switching N-channel power MOS FET industrial use
2SK2477 Switching N-channel power MOS FET industrial use
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