參數(shù)資料
型號(hào): 2SK2529
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 51K
代理商: 2SK2529
2SK2529
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
I
AP
*
3
E
AR
*
3
Pch*
2
60
V
Gate to source voltage
±
20
V
Drain current
50
A
Drain peak current
200
A
Body to drain diode reverse drain current
50
A
Avalanche current
45
A
Avalanche energy
174
mJ
Channel dissipation
35
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
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