參數(shù)資料
型號(hào): 2SK2529
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 51K
代理商: 2SK2529
2SK2529
5
1.0
0.8
0.6
0.4
0.2
0
Gate to Source Voltage V (V)
D
D
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2
4
6
8
10
I = 50 A
20 A
10 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
0.5
1
10
100
1000
3
30
300
0.2
0.1
0.02
0.05
0.01
0.002
0.005
0.001
0.0005
V = 4 V
10 V
Pulse Test
0.04
0.032
0.024
0.016
0.008
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature
I = 50 A
D
V = 4 V
10 V
10, 20 A
10, 20, 50 A
0.1
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.3
1
3
10
30
100
V = 10 V
Pulse Test
500
100
200
20
10
50
2
5
1
0.5
25 °C
Tc = –25 °C
75 °C
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