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參數(shù)資料
| 型號： | 2SK2553L |
| 元件分類： | JFETs |
| 英文描述： | 0.016 ohm, POWER, FET |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SK2553L |
2SK2553
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
——10
A
V
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—7
10
m
I
D = 25 A
V
GS = 10 V*
1
—10
16
m
I
D = 25 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
3555—
S
I
D = 25 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
3550
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1760
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—35
—
ns
I
D = 25 A
Rise time
t
r
—
230
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
470
—
ns
R
L = 1.2
Fall time
t
f
—
360
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
135
—
ns
I
F = 50 A, VGS = 0
diF / dt = 50 A / s
Note
1. Pulse Test
See characteristic curves of 2SK2529.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2553-L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2553L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2554 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P Cut Tape |
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