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參數(shù)資料
| 型號： | 2SK2595 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅N溝道場效應(yīng)晶體管超高頻功率放大器 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2SK2595 |
Rev.4.00, Feb.14.2005, page 1 of 13
2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0206-0400
Rev.4.00
Feb.14.2005
Features
High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W,
η
D = 50% min. (f = 836.5 MHz)
Compact package capable of surface mounting
Outline
PLSS0003ZA-A
(Previous code : RP8P)
D
G
S
1
2
3
1. Gate
2. Source
3. Drain
Note:
Marking is "AX".
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Pch
Note2
Tch
Tstg
Ratings
17
±
10
1.1
5
20
150
– 45 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
Note1
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