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參數(shù)資料
| 型號(hào)： | 2SK2595 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管超高頻功率放大器 |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | 2SK2595 |
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2SK2595
Rev.4.00, Feb.14.2005, page 3 of 13
70
-10
- 6
- 2
2
6
10
50
60
V
DS
= 0
f = 1 MHz
100
20
10
50
0.1 0.2
0.5
Drain to Source V
DS
(V)
1
2
5
10 20
50
V
GS
= 0
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
I
O
Output Capacitance vs.
Drain to Source Voltage
10
2
1
0.1 0.2
5
0.5
1
2
5
10 20
50
V
GS
= 0
f = 1 MHz
10
8
6
4
2
0
100
80
60
40
20
0
1
0.8
0.6
0.4
0.2
V
DS
= 12 V
I
DO
= 500 mA
f = 836.5 MHz
Po
η
D
Output Power, Drain Efficiency
vs. Input Power
O
Input power Pin (W)
D
η
D
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Drain to Gate Voltage V
DG
(V)
R
0.1
10
2
1
5
0.2
0.5
0.1
0.02
0.01
0.05
0.2
0.5
1
2
5
10
Tc = –25
°
C
25
°
C
75
°
C
1.2
1.0
0.8
0.6
0.4
0.2
- 25
0
0
25
50
75
100
125
1 mA
10 mA
I
D
= 0.1 mA
V
DS
= 12 V
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current I
D
(A)
Ambient Temperature Ta (
°
C)
G
Gate to Source Cutoff Voltage vs.
Ambient Temperature
D
V
D
(
V
GS
= 10 V
Pulse Test
V
G
(
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