參數(shù)資料
型號: 2SK2796L-E
元件分類: JFETs
英文描述: 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁數(shù): 3/9頁
文件大小: 95K
代理商: 2SK2796L-E
2SK2796(L), 2SK2796(S)
Rev.5.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.2
0.5 1
2
10 20
100
5
4
3
2
1
0
2
468
10
5
4
3
2
1
0
24
68
10
10 V 6 V
40
30
20
10
0
50
100
150
200
100
30
10
3
1
0.3
0.1
3.5 V
4 V
5 V
VGS = 2 V
2.5 V
3 V
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
5
50
Ta = 25
°C
1 ms
PW
=
10
ms
(1shot)
DC
Operat
ion
(Tc
=
25
°C)
Operation in
this area is
limited by RDS(on)
100
s
10
s
Pulse Test
2.0
1.6
1.2
0.8
0.4
0
24
6
8
10
0.1
3
100
0.3
30
5
2
1
0.2
0.5
0.1
0.05
10
1
ID = 5 A
2 A
1 A
VGS = 4 V
10 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SK2796STL-E 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796STL-E 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
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