參數(shù)資料
型號: 2SK2796L-E
元件分類: JFETs
英文描述: 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁數(shù): 4/9頁
文件大?。?/td> 95K
代理商: 2SK2796L-E
2SK2796(L), 2SK2796(S)
Rev.5.00 Sep 07, 2005 page 4 of 8
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
0.1
0.2
0.5
1
2
5
10
5
1
2
0.2
0.5
0.1
ID = 5 A
VGS = 4 V
10 V
1, 2 A
1 A
2 A
5 A
25
°C
Tc = –25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
0.1
0.2
0.5
1
2
5
10
010
20
30
40
50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
246
8
10
0
100
50
10
20
2
5
1
500
200
50
100
10
20
5
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 5 A
VGS
VDS
VDD = 50 V
25 V
10 V
VDD = 10 V
25 V
50 V
0.1
0.2
0.5
1
2
5
10
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
相關(guān)PDF資料
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