參數(shù)資料
型號(hào): 2SK2796L
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 71K
代理商: 2SK2796L
2SK2796(L), 2SK2796(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
60
V
Gate to source voltage
±
20
V
Drain current
5
A
Drain peak current
Note1
20
A
Body-drain diode reverse drain current
5
A
Avalanche current
Note3
5
A
Avalanche energy
Note3
2.14
mJ
Channel dissipation
20
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
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