參數(shù)資料
型號: 2SK2796L
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 7/10頁
文件大?。?/td> 71K
代理商: 2SK2796L
2SK2796(L), 2SK2796(S)
7
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
V = 0, –5 V
10 V
5 V
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
0
Channel Temperature Tch (°C)
R
A
Maximun Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = 1
2
V
V – V
AP
DSS
DD
2
Avalanche Test Circuit
Avalanche Waveform
I = 5 A
V = 25 V
duty < 0.1 %
Rg > 50
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參數(shù)描述
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2SK2796S(TL-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2796S-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(2+Tab) DPAK(S)
2SK2796STL-E 制造商:Renesas Electronics Corporation 功能描述: