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參數(shù)資料
| 型號(hào)： | 2SK2796S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 71K |
| 代理商： | 2SK2796S |
2SK2796(L), 2SK2796(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage
60
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 3 A, V
GS
= 10V
Note4
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
±
20
—
—
V
Zero gate voltege drain current
—
—
10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state
resistance
—
0.12
0.16
Static drain to source on state
resistance
R
DS(on)
—
0.16
0.25
I
D
= 3A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
Ciss
2.5
4.0
—
S
I
D
= 3A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
Input capacitance
—
180
—
pF
Output capacitance
Coss
—
90
—
pF
Reverse transfer capacitance
Crss
—
30
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
9
—
ns
V
GS
= 10V, I
D
= 3A
R
L
= 10
Rise time
—
25
—
ns
Turn-off delay time
—
35
—
ns
Fall time
—
55
—
ns
Body–drain diode forward voltage
—
1.0
—
V
I
F
= 5A, V
GS
= 0
I
= 5A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
40
—
ns
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