參數(shù)資料
型號: 2SK2796S
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 4/10頁
文件大?。?/td> 71K
代理商: 2SK2796S
2SK2796(L), 2SK2796(S)
4
Main Characteristics
0.2
0.5 1
Drain to Source Voltage V (V)
2
10 20
100
5
4
3
2
1
0
2
4
6
8
10
5
4
3
2
1
0
2
4
6
8
10
D
10 V 6 V
40
30
20
10
0
50
100
150
200
100
30
10
3
1
0.3
0.1
3.5 V
4 V
5 V
V = 2 V
2.5 V
3 V
Tc = 75°C
25°C
–25°C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
5
50
Ta = 25°C
1ms
PW=10ms(1sho)
DCOpeaion(T =25C
Operation in
this area is
limited by R
DS(on)
100μs
10μs
Pulse Test
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