參數(shù)資料
型號(hào)： 2SK2906-01
廠商： FUJI ELECTRIC CO LTD
元件分類(lèi)： JFETs
英文描述： N-channel MOS-FET
中文描述： 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 249K
代理商： 2SK2906-01
2SK2906-01
FAP-IIIB Series
N-channel MOS-FET
60V
7,8m
±100A
150W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ*
W
°C
°C
60
±100
±400
±30
1268.3
150
150
-55 ~ +150
L=0.169mH,Vcc=24V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=10mA
V
DS
=60V
V
GS
=0V
V
GS
=±30V
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
m
m
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
60
2,5
3,0
10
0,2
10
3,5
500
1,0
100
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
I
D
=50A
I
D
=50A
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
5,7
55
7,8
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
25
5400
2100
550
8100
3150
830
V
CC
=30V
V
GS
=10V
I
D
=100A
29
50
200
160
150
350
240
230
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
R
GS
=10
T
ch
=25°C
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=100A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-dI/dt=100A/μs T
ch
=25°C
100
1,0
85
0,21
1,5
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
0,83
35,0
Unit
°C/W
°C/W
R
th(ch-c)
R
th(ch-a)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2906-01SC 制造商:Fuji Electric 功能描述:
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2SK2907-01R 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 5.7 Milliohms, ID +/-100A, TO-3PF, PD 125W, VF 1
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